Tunable aluminium-gated single electron transistor on a doped silicon-on-insulator etched nanowire

We report the fabrication and electrical characterization of an electrostatically defined aluminum-gated SET on a lightly doped SOI etched nanowire based on MOSFET structures. The tunability of the device is achieved via two sets of electrically isolated aluminum surface gates. The results demonstra...

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Bibliographic Details
Published in:Applied physics letters 2012-09, Vol.101 (10)
Main Authors: Gonzalez-Zalba, F, Heiss, D, Podd, G, Ferguson, A J
Format: Article
Language:English
Subjects:
Aluminum
Etching
Gates
MOSFETs
Nanocomposites
Nanomaterials
Nanostructure
Nanowires
Single-electron transistors
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Summary:We report the fabrication and electrical characterization of an electrostatically defined aluminum-gated SET on a lightly doped SOI etched nanowire based on MOSFET structures. The tunability of the device is achieved via two sets of electrically isolated aluminum surface gates. The results demonstrate a reproducible constant charging energy of 2 meV for a large range of gate voltages as well as tunable tunneling resistance. The controllable tunnel barriers permit transport spectroscopy of subthreshhold features.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4750251