Impacts of the 4H-SiC/SiO sub(2) interface states on the switching operation of power MOSFETs

Impacts of the 4H-SiC/SiO sub(2) interface states on the switching operation of power MOSFETs are evaluated. The energy distributions of the interface states are characterized using measured C-V curves of the MOS capacitors with the aid of TCAD simulation. The effect of nitrogen incorporation into t...

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Bibliographic Details
Published in:International Conference on Simulation of Semiconductor Processes and Devices 2015-09, p.64-67
Main Authors: Sakai, Atsushi, Eikyu, Katsumi, Sonoda, Kenichiro, Hisada, Kenichi, Arai, Koichi, Yamamoto, Yoichi, Tanizawa, Motoaki, Yamaguchi, Yasuo
Format: Article
Language:English
Subjects:
Conferences
Devices
Energy distribution
MOSFETs
Semiconductors
Silicon dioxide
Simulation
Switching
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Summary:Impacts of the 4H-SiC/SiO sub(2) interface states on the switching operation of power MOSFETs are evaluated. The energy distributions of the interface states are characterized using measured C-V curves of the MOS capacitors with the aid of TCAD simulation. The effect of nitrogen incorporation into the SiC/SiO sub(2) interface via post-oxidation anneal (POA) on reducing the interface states is confirmed by the extracted energy distributions. The effect of POA on turn-on/off energy losses of the switching circuit is quantitatively evaluated using mixed-mode TCAD simulation with the extracted interface state parameters.
ISSN:1946-1569
DOI:10.1109/SISPAD.2015.7292259