TCAD modeling challenges for 14nm FullyDepleted SOI technology performance assessment

This paper reviews the main challenges for the TCAD of 14nm Fully-Depleted Silicon-On-Insulator (FDSOI) technology performance assessment. Thanks to a multi-scale approach combining extensive electrical characterization and advanced solvers simulations, ensuring deep physical insight, we provide TCA...

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Main Authors: Tavernier, C., Pereira, F. G., Nier, O., Rideau, D., Monsieur, F., Torrente, G., Haond, M., Jaouen, H., Noblanc, O., Niquet, Y. M., Jaud, M.-A, Triozon, F., Casse, M., Lacord, J., Barbe, J. C.
Format: Conference Proceeding
Language:English
Subjects:
Computational modeling
Computer simulation
Conferences
Devices
Electrical properties
Logic gates
MOS devices
Performance assessment
Performance evaluation
Resistance
Semiconductor device modeling
Semiconductors
Silicon germanium
Simulation
Solvers
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Summary:This paper reviews the main challenges for the TCAD of 14nm Fully-Depleted Silicon-On-Insulator (FDSOI) technology performance assessment. Thanks to a multi-scale approach combining extensive electrical characterization and advanced solvers simulations, ensuring deep physical insight, we provide TCAD simulation framework for device layout optimization, strain engineering and device reliability assessment.
ISSN:1946-1569
1946-1577
DOI:10.1109/SISPAD.2015.7292244