Strain Imaging of Nanoscale Semiconductor Heterostructures with X-Ray Bragg Projection Ptychography

We report the imaging of nanoscale distributions of lattice strain and rotation in complementary components of lithographically engineered epitaxial thin film semiconductor heterostructures using synchrotron x-ray Bragg projection ptychography (BPP). We introduce a new analysis method that enables l...

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Bibliographic Details
Published in:Physical review letters 2015-04, Vol.112 (16)
Main Authors: Holt, Martin V, Hruszkewycz, Stephan O, Murray, Conal E, Holt, Judson R, Paskiewicz, Deborah M, Fuoss, Paul H
Format: Article
Language:English
Subjects:
Heterostructures
Imaging
Lattices
Nanostructure
Projection
Semiconductors
Strain
X-rays
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Summary:We report the imaging of nanoscale distributions of lattice strain and rotation in complementary components of lithographically engineered epitaxial thin film semiconductor heterostructures using synchrotron x-ray Bragg projection ptychography (BPP). We introduce a new analysis method that enables lattice rotation and out-of-plane strain to be determined independently from a single BPP phase reconstruction, and we apply it to two laterally adjacent, multiaxially stressed materials in a prototype channel device. These results quantitatively agree with mechanical modeling and demonstrate the ability of BPP to map out-of-plane lattice dilatation, a parameter critical to the performance of electronic materials.
ISSN:0031-9007
1079-7114