Influence of surface wave plasma deposition conditions on diamond growth regime

• Published in: Surface & coatings technology 2015-06, Vol.271, p.74-79
• Main Authors: Babchenko, O., Potocký, Š., Ižák, T., Hruška, K., Bryknar, Z., Kromka, A.
• Format: Article
• Language: English
• Subjects: Antennas; Crystals; Deposition; Diamond thin films; Diamonds; Growth kinetics; Low pressure; Optical emission spectroscopy; Raman spectroscopy; Reactors; Scanning electron microscopy; Surface wave plasma; Surface waves; Thin films
• ISSN: 0257-8972; 1879-3347
• DOI: 10.1016/j.surfcoat.2015.01.012

The influence of deposition conditions on the diamond thin film growth in linear antenna microwave plasma system, also known as surface wave plasma reactor, is presented in this study. Depending on the process pressure the two growth regimes were identified. At high pressures (over 50Pa) dominates the re-nucleation regime that results in ultra-small diamond crystals, while at low pressures (below 10Pa) dominates the lateral growth regime that leads to formation of large diamond crystals. Next, it was shown that the distance of substrates from “hot” plasma region influences the diamond growth kinetics and results in growth regimes shift. Altogether, the observed results contribute to a better understanding of the diamond growth phenomena in surface wave plasma systems. Thus, it allows controllable growth of diamond films with tailored properties (morphology, roughness, etc.). •Diamond films were grown by linear antenna pulsed microwave plasma system.•Different film morphologies were observed for pressures in the range 8–100Pa.•Re-nucleation at high pressures and lateral growth at low pressures were suggested.•The effect on growth kinetic was explained by the change of species composition.