Evolution of intragranular stresses and dislocation densities during cyclic deformation of polycrystalline copper

We have used the cross-correlation based high resolution electron backscattering diffraction (HR-EBSD) technique to evaluate at high spatial resolution the spatial patterning of the type III intragranular residual stresses and geometrically necessary dislocation (GND) density within polycrystalline...

Full description

Saved in:
Bibliographic Details
Published in:Acta materialia 2015-08, Vol.94, p.193-204
Main Authors: Jiang, Jun, Benjamin Britton, T., Wilkinson, Angus J.
Format: Article
Language:English
Subjects:
BOUNDARIES
Copper
CRYSTAL STRUCTURE
DEFORMATION
Density
Dislocation density
DISLOCATIONS
Fatigue deformation
Geometrically necessary dislocations (GNDs)
Grain boundaries
High resolution electron backscattering diffraction (HR-EBSD)
Intragranular stress
RESIDUAL STRESS
Statistical analysis
Statistical methods
STRESS
Stresses
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We have used the cross-correlation based high resolution electron backscattering diffraction (HR-EBSD) technique to evaluate at high spatial resolution the spatial patterning of the type III intragranular residual stresses and geometrically necessary dislocation (GND) density within polycrystalline Cu after cyclic deformation. Oxygen free high conductivity (OFHC) polycrystalline copper samples were cyclically deformed under stress-control at a load ratio of 0.1 and EBSD measurements were made at points throughout the early stages of fatigue when strain amplitudes and cyclic creep rates are changing most significantly, namely at 0 cycles, 2 cycles, 200 cycles and 2000 cycles. Statistical analysis is presented showing that moderate correlations exist between stored GND density, residual intragranular stress and distance from the nearest grain boundaries and/or triple junctions.
ISSN:1359-6454
1873-2453
DOI:10.1016/j.actamat.2015.04.031