Low-temperature photo-induced mass transfer in thin As20Se80 amorphous films

We have detected that surface relief gratings (SRG) in amorphous chalcogenide films As20Se80 can be optically recorded at low temperature, such as 77K. A diffusion mechanism of photo-induced (PI) mass transport is proposed. A driving force of PI mass transport is a lateral steady state electric fiel...

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Bibliographic Details
Published in:Materials letters 2015-12, Vol.160, p.558-561
Main Authors: Takáts, V., Trunov, M.L., Vad, K., Hakl, J., Beke, D.L., Kaganovskii, Yu, Kökényesi, S.
Format: Article
Language:English
Subjects:
Activation energy
Amorphous chalcogenide films
Chalcogenides
Diffraction gratings
Diffusion
Mass transfer
Photo-induced mass transport
Steady state
Surface relief gratings
Thin films
Transport
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Summary:We have detected that surface relief gratings (SRG) in amorphous chalcogenide films As20Se80 can be optically recorded at low temperature, such as 77K. A diffusion mechanism of photo-induced (PI) mass transport is proposed. A driving force of PI mass transport is a lateral steady state electric field induced by light interference. The kinetics of PI SRG growth depends on temperature due to temperature dependence of PI diffusion coefficients and concentration of radiation defects. By comparison of low temperature kinetics with that at 300K we estimated diffusion activation energy, which turned out 0.09eV. We present a model that explains low diffusion activation energy. •Low temperature photo-induced mass transfer in chalcogenide films is detected.•The mass transfer kinetics is measured and theoretically described.•Photo-induced diffusion coefficients and activation energy are estimated.•Diffusion mechanism is proposed that explains low migration energy.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2015.08.040