Patterning of sub-50 nm perpendicular CoFeB/MgO-based magnetic tunnel junctions

Perpendicular magnetic tunnel junctions (p-MTJs) were patterned into nanopillars using electron-beam lithography to study their scaling and switching behaviour. Magnetoresistance measurements of annealed and unannealed p-MTJ films using scanning probe microscopy showed good agreement with Monte Carl...

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Bibliographic Details
Published in:Nanotechnology 2016-05, Vol.27 (18), p.185302-185302
Main Authors: Tryputen, Larysa, Tu, Kun-Hua, Piotrowski, Stephan K, Bapna, Mukund, Majetich, Sara A, Sun, Congli, Voyles, Paul M, Almasi, Hamid, Wang, Weigang, Vargas, Patricio, Tresback, Jason S, Ross, Caroline A
Format: Article
Language:English
Subjects:
Electron beam lithography
Inhomogeneity
Magnesium oxide
Magnetoresistance
Magnetoresistivity
metal nanopillars
nanofabrication
Patterning
perpendicular magnetic tunnel junctions
Pillars
spintronics
Tunnel junctions
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Summary:Perpendicular magnetic tunnel junctions (p-MTJs) were patterned into nanopillars using electron-beam lithography to study their scaling and switching behaviour. Magnetoresistance measurements of annealed and unannealed p-MTJ films using scanning probe microscopy showed good agreement with Monte Carlo modeling. p-MTJ pillars demonstrated clear parallel magnetic states, both 'up' or both 'down' following AC-demagnetization. Significant variability in the resistance of p-MTJ pillars was observed and attributed to edge features generated during patterning or local inhomogeneity in the MgO layer.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/27/18/185302