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Fine genetic mapping of spot blotch resistance gene Sb3 in wheat (Triticum aestivum)

KEY MESSAGE : Spot blotch disease resistance gene Sb3 was mapped to a 0.15 centimorgan (cM) genetic interval spanning a 602 kb physical genomic region on chromosome 3BS. Wheat spot blotch disease, caused by B. sorokiniana, is a devastating disease that can cause severe yield losses. Although inoculu...

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Published in:Theoretical and applied genetics 2016-03, Vol.129 (3), p.577-589
Main Authors: Lu, Ping, Liang, Yong, Li, Delin, Wang, Zhengzhong, Li, Wenbin, Wang, Guoxin, Wang, Yong, Zhou, Shenghui, Wu, Qiuhong, Xie, Jingzhong, Zhang, Deyun, Chen, Yongxing, Li, Miaomiao, Zhang, Yan, Sun, Qixin, Han, Chenggui, Liu, Zhiyong
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Language:English
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Summary:KEY MESSAGE : Spot blotch disease resistance gene Sb3 was mapped to a 0.15 centimorgan (cM) genetic interval spanning a 602 kb physical genomic region on chromosome 3BS. Wheat spot blotch disease, caused by B. sorokiniana, is a devastating disease that can cause severe yield losses. Although inoculum levels can be reduced by planting disease-free seed, treatment of plants with fungicides and crop rotation, genetic resistance is likely to be a robust, economical and environmentally friendly tool in the control of spot blotch. The winter wheat line 621-7-1 confers immune resistance against B. sorokiniana. Genetic analysis indicates that the spot blotch resistance of 621-7-1 is controlled by a single dominant gene, provisionally designated Sb3. Bulked segregant analysis (BSA) and simple sequence repeat (SSR) mapping showed that Sb3 is located on chromosome arm 3BS linked with markers Xbarc133 and Xbarc147. Seven and twelve new polymorphic markers were developed from the Chinese Spring 3BS shotgun survey sequence contigs and 3BS reference sequences, respectively. Finally, Sb3 was mapped in a 0.15 cM genetic interval spanning a 602 kb physical genomic region of Chinese Spring chromosome 3BS. The genetic and physical maps of Sb3 provide a framework for map-based cloning and marker-assisted selection (MAS) of the spot blotch resistance.
ISSN:0040-5752
1432-2242
DOI:10.1007/s00122-015-2649-z