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Nb/Al-AlOx/Nb junctions with controllable critical current density for qubit application

Nb/Al-AlOx/Nb tunnel junctions with controllable critical current density JC are fabricated using the standard selective Nb etching process. Tunnel barriers are formed in different oxygen exposure conditions (oxygen pressure P and oxidation time t), giving rise to JC ranging from 100 A/cm2 to above...

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Bibliographic Details
Published in:Chinese physics B 2009-11, Vol.18 (11), p.5044-5046
Main Authors: Wen-Hui, Cao, Hai-Feng, Yu, Ye, Tian, Hong-Wei, Yu, Yu-Feng, Ren, Geng-Hua, Chen, Shi-Ping, Zhao
Format: Article
Language:English
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Summary:Nb/Al-AlOx/Nb tunnel junctions with controllable critical current density JC are fabricated using the standard selective Nb etching process. Tunnel barriers are formed in different oxygen exposure conditions (oxygen pressure P and oxidation time t), giving rise to JC ranging from 100 A/cm2 to above 2000 A/cm2. JC shows a familiar linear dependence on P X t in logarithmic scales. We calculate the energy levels of the phase- and flux-type qubits using the achievable junction parameters and show that the fabricated Nb/Al-AlOx/Nb tunnel junctions can be used conveniently for quantum computation applications in the future.
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/18/11/072