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Nb/Al-AlOx/Nb junctions with controllable critical current density for qubit application
Nb/Al-AlOx/Nb tunnel junctions with controllable critical current density JC are fabricated using the standard selective Nb etching process. Tunnel barriers are formed in different oxygen exposure conditions (oxygen pressure P and oxidation time t), giving rise to JC ranging from 100 A/cm2 to above...
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Published in: | Chinese physics B 2009-11, Vol.18 (11), p.5044-5046 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Online Access: | Get full text |
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Summary: | Nb/Al-AlOx/Nb tunnel junctions with controllable critical current density JC are fabricated using the standard selective Nb etching process. Tunnel barriers are formed in different oxygen exposure conditions (oxygen pressure P and oxidation time t), giving rise to JC ranging from 100 A/cm2 to above 2000 A/cm2. JC shows a familiar linear dependence on P X t in logarithmic scales. We calculate the energy levels of the phase- and flux-type qubits using the achievable junction parameters and show that the fabricated Nb/Al-AlOx/Nb tunnel junctions can be used conveniently for quantum computation applications in the future. |
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ISSN: | 1674-1056 2058-3834 |
DOI: | 10.1088/1674-1056/18/11/072 |