Silicon surface passivation using thin HfO2 films by atomic layer deposition

•HfO2 films using thermal ALD are studied for silicon surface passivation.•As-deposited thin film (∼8nm) shows better passivation with surface recombination velocity (SRV)

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Bibliographic Details
Published in:Applied surface science 2015-12, Vol.357, p.635-642
Main Authors: Gope, Jhuma, Vandana, Batra, Neha, Panigrahi, Jagannath, Singh, Rajbir, Maurya, K.K., Srivastava, Ritu, Singh, P.K.
Format: Article
Language:English
Subjects:
ALD
Annealing
Density
Deposition
Film thickness
Fixed charge
Hafnium oxide
HfO2
Interface defect density
Passivation
Silicon
Surface passivation
Thin films
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Description
Summary:•HfO2 films using thermal ALD are studied for silicon surface passivation.•As-deposited thin film (∼8nm) shows better passivation with surface recombination velocity (SRV)
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2015.09.020