Size Effect on Interlayer Coupling and Magnetoresistance Oscillation of Magnetic Tunnel Junction Embedded With Iron Nanoparticles

Here, we investigate the size effect of perpendicular-anisotropic double-barrier magnetic tunnel junction (MTJ) devices embedded with iron nanoparticles. A sputtering system in conjunction with the postannealing process is employed to prepare the sheet film and standard lithography techniques follow...

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Bibliographic Details
Published in:IEEE transactions on magnetics 2015-11, Vol.51 (11), p.1-4
Main Authors: Yen-Chi Lee, Das, Bipul, Te-Ho Wu, Horng, Lance, Jong-Ching Wu
Format: Article
Language:English
Subjects:
Bias
Devices
Iron
Joining
Junctions
Magnetic tunneling
Magnetism
Magnetoresistance
Magnetoresistivity
Magnetostatics
nanoparticle
Nanoparticles
Oscillations
Oscillators
perpendicular anisotropy
size effect
Switches
Tunnel junctions
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Summary:Here, we investigate the size effect of perpendicular-anisotropic double-barrier magnetic tunnel junction (MTJ) devices embedded with iron nanoparticles. A sputtering system in conjunction with the postannealing process is employed to prepare the sheet film and standard lithography techniques followed by the ion etching technique are used to fabricate the micrometer to submicrometer MTJ devices. A strong ferromagnetic coupling is observed as we reduce the size of the device to submicrometer scale, which is due to the reduction of magnetostatic energy of the device. Furthermore, a magnetoresistance (MR) oscillation is observed at room temperature while reducing the size of the device. MR peaks at low bias fields are believed to have magnon contributions, whereas the peaks observed at higher bias fields are responsible for phonon-assisted tunneling. Zero-bias anomalies are also observed and are more prominent in antiparallel states of the devices.
ISSN:0018-9464
1941-0069
DOI:10.1109/TMAG.2015.2438326