High power terahertz induced carrier multiplication in Silicon

The application of an intense THz field results a nonlinear transmission in high resistivity silicon. Upon increasing field strength, the transmission falls from 70% to 62% due to carrier generation through THz-induced impact ionization and subsequent absorption of the THz field by free electrons.

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Bibliographic Details
Main Authors: Tarekegne, A. T., Klarskov, P., Iwaszczuk, K., Jepsen, P. U.
Format: Conference Proceeding
Language:English
Subjects:
Absorption
Antenna arrays
Arrays
Carriers
Conductivity
Conferences
Electric power generation
Electrical resistivity
Field strength
Impact ionization
Infrared
Ionization
Resonant frequency
Silicon
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Description
Summary:The application of an intense THz field results a nonlinear transmission in high resistivity silicon. Upon increasing field strength, the transmission falls from 70% to 62% due to carrier generation through THz-induced impact ionization and subsequent absorption of the THz field by free electrons.
ISSN:2162-2027
2162-2035
DOI:10.1109/IRMMW-THz.2015.7327401