Highly thermally conductive POSS-g-SiCp/UHMWPE composites with excellent dielectric properties and thermal stabilities

• Published in: Composites. Part A, Applied science and manufacturing Applied science and manufacturing, 2015-11, Vol.78, p.95-101
• Main Authors: Gu, Junwei, Guo, Yongqiang, Lv, Zhaoyuan, Geng, Wangchang, Zhang, Qiuyu
• Format: Article
• Language: English
• Subjects: A. Polymer-matrix composites (PMCs); B. Thermal properties; D. Mechanical testing; Dielectric constant; Dielectric properties; E. Compression moulding; Fillers; Particulate composites; Polyethylenes; Silicon carbide; Thermal conductivity; Thermal stability
• ISSN: 1359-835X; 1878-5840
• DOI: 10.1016/j.compositesa.2015.08.004

Polyhedral oligomeric silsesquioxane grafting thermally conductive silicon carbide particle (POSS-g-SiCp) fillers, are performed to fabricate highly thermally conductive ultra high molecular weight polyethylene (UHMWPE) composites combining with optimal dielectric properties and excellent thermal stabilities, via mechanical ball milling followed by hot-pressing method. The POSS-g-SiCp/UHMWPE composite with 40wt% POSS-g-SiCp exhibits relative higher thermal conductivity, lower dielectric constant and more excellent thermal stability, the corresponding thermally conductive coefficient of 1.135W/mK, the dielectric constant of 3.22, and the 5wt% thermal weight loss temperature of 423°C, which holds potential for packaging and thermal management in microelectronic devices. Agari’s semi-empirical model fitting reveals POSS-g-SiCp fillers have strong ability to form continuous thermally conductive networks.