Bias induced cutoff redshift of photocurrent in ZnO ultraviolet photodetectors

•ZnO MSM UV photodetector has been prepared by RF magnetron sputtering technique.•The cutoff can redshift from 361 to 379nm with increasing the bias.•The origin has been interpreted considering the band gap declining. A ZnO film with a c-axis preferred orientation was prepared on quartz using the ra...

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Bibliographic Details
Published in:Applied surface science 2015-12, Vol.359, p.432-434
Main Authors: Zhao, Man, Wang, Xin, Yang, Guang, Zhou, Mai-Yu, Liu, Wen-Jing, Luo, Tian-Wen, Tan, Hai-Feng, Sun, Xiao-Rui
Format: Article
Language:English
Subjects:
Bias
Photocurrent
Photodetectors
Photoelectric effect
Radio frequencies
Red shift
Redshift
Ultraviolet
Zinc oxide
ZnO
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Summary:•ZnO MSM UV photodetector has been prepared by RF magnetron sputtering technique.•The cutoff can redshift from 361 to 379nm with increasing the bias.•The origin has been interpreted considering the band gap declining. A ZnO film with a c-axis preferred orientation was prepared on quartz using the radio frequency (RF) magnetron sputtering technique. Then, a metal-semiconductor-metal (MSM)-structured ultraviolet (UV) photodetector was fabricated on the film. It was found that the cutoff wavelength of the photocurrent redshifted from 361 to 379nm when the bias increased from 5 to 30V. The origin of the redshift has been interpreted in terms of a qualitative model considering the declining band gap caused by the bias. This method opens up the possibility of tuning the cutoff redshift of ZnO UV photodetectors.
ISSN:0169-4332
DOI:10.1016/j.apsusc.2015.10.109