Electrical Contact Analysis of Multilayer MoS sub(2) Transistor With Molybdenum Source/Drain Electrodes

We demonstrate a two-dimensional (2D) multilayered molybdenum disulfide (MoS sub(2)) transistor with molybdenum (Mo) side and edge contacts, which is deposited using a dc-sputtering method. It exhibits field-effect mobility of 23.9 cm $\mathrm {2}}$ /Vs and ON/OFF ratio of $10\mathrm { {6}}}$ in a l...

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Bibliographic Details
Published in:IEEE electron device letters 2015-11, Vol.36 (11), p.1215-1218
Main Authors: Yoo, Geonwook, Lee, Sungho, Yoo, Byoungwook, Han, Chuljong, Kim, Sunkook, Oh, Min Suk
Format: Article
Language:English
Subjects:
Channels
Contact
Electric contacts
Molybdenum
Molybdenum disulfide
Semiconductor devices
Transistors
Two dimensional
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Summary:We demonstrate a two-dimensional (2D) multilayered molybdenum disulfide (MoS sub(2)) transistor with molybdenum (Mo) side and edge contacts, which is deposited using a dc-sputtering method. It exhibits field-effect mobility of 23.9 cm $\mathrm {2}}$ /Vs and ON/OFF ratio of $10\mathrm { {6}}}$ in a linear region. A current-voltage study under different temperatures (300-393 K) reveals that the Mo-MoS sub(2) transistor shows a band transport characteristics, and a Schottky barrier height of 0.14 eV is estimated using a thermionic emission theory. Finally, the side and edge contacts of Mo-MoS sub(2) are confirmed through the transmission electron microscope analysis. Our results not only show that Mo can be an alternative contact metal to other low work-function metals but also that the edge contact may play an important role in resolving the performance degradation over thickness increase of the MoS sub(2) channel layer.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2015.2478899