Electrical Contact Analysis of Multilayer MoS sub(2) Transistor With Molybdenum Source/Drain Electrodes

• Published in: IEEE electron device letters 2015-11, Vol.36 (11), p.1215-1218
• Main Authors: Yoo, Geonwook, Lee, Sungho, Yoo, Byoungwook, Han, Chuljong, Kim, Sunkook, Oh, Min Suk
• Format: Article
• Language: English
• Subjects: Channels; Contact; Electric contacts; Molybdenum; Molybdenum disulfide; Semiconductor devices; Transistors; Two dimensional
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2015.2478899

We demonstrate a two-dimensional (2D) multilayered molybdenum disulfide (MoS sub(2)) transistor with molybdenum (Mo) side and edge contacts, which is deposited using a dc-sputtering method. It exhibits field-effect mobility of 23.9 cm $\mathrm {2}}$ /Vs and ON/OFF ratio of $10\mathrm { {6}}}$ in a linear region. A current-voltage study under different temperatures (300-393 K) reveals that the Mo-MoS sub(2) transistor shows a band transport characteristics, and a Schottky barrier height of 0.14 eV is estimated using a thermionic emission theory. Finally, the side and edge contacts of Mo-MoS sub(2) are confirmed through the transmission electron microscope analysis. Our results not only show that Mo can be an alternative contact metal to other low work-function metals but also that the edge contact may play an important role in resolving the performance degradation over thickness increase of the MoS sub(2) channel layer.