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Large area CVD growth of graphene

[Display omitted] •Advances in the large area graphene synthesis by chemical vapor deposition are reviewed.•Growth mechanisms of grpahene on both metal and insulating substrates are discussed.•Special attention was paid on the recent progress of ultra large single crystal and bilayer graphene synthe...

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Bibliographic Details
Published in:Synthetic metals 2015-12, Vol.210, p.95-108
Main Authors: Chen, Xiangping, Zhang, Lili, Chen, Shanshan
Format: Article
Language:English
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Summary:[Display omitted] •Advances in the large area graphene synthesis by chemical vapor deposition are reviewed.•Growth mechanisms of grpahene on both metal and insulating substrates are discussed.•Special attention was paid on the recent progress of ultra large single crystal and bilayer graphene synthesis on Cu substrate.•The comprehensive review of bilayer and multilayer graphene synthesis are given.•Advances in graphene synthesis on insulating substrate are comprehensively reviewed. During the past decade, graphene, a single layer of sp2-hybridized carbon atoms, has attracted enormous interest among scientists due to its unique physical, mechanical and electrical properties. Recently developed chemical vapor deposition technique has emerged as the most popular method for the scalable production of large-area and high-quality graphene for various applications. The key objective of this article is to provide a detailed and up to date review on the synthesis of large area monolayer, bilayer and multilayer graphene on different substrates via chemical vapor deposition method. Challenges and future perspective in this field are highlighted.
ISSN:0379-6779
1879-3290
DOI:10.1016/j.synthmet.2015.07.005