Growth and characterization of InAs/InAsSb superlattices by metal organic chemical vapor deposition for mid-wavelength infrared photodetectors

InAs/InAsSb superlattices were grown on (001) GaSb substrates by metal organic chemical vapor deposition for potential applications as mid-infrared optoelectronic devices. Atomic force microscopy, X-ray diffraction, transmission electron microscopy and photoluminescence emission were used to charact...

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Bibliographic Details
Published in:Materials letters 2016-02, Vol.164, p.213-216
Main Authors: Ning, Zhen-Dong, Liu, Shu-Man, Luo, Shuai, Ren, Fei, Wang, Fengjiao, Yang, Tao, Liu, Feng-Qi, Wang, Zhan-Guo, Zhao, Lian-Cheng
Format: Article
Language:English
Subjects:
Epitaxial growth
Indium arsenides
Infrared
Intermetallics
Metal organic chemical vapor deposition
Operating temperature
Optoelectronic devices
Photoluminescence
Superlattices
Temperature-dependent
Thin films
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Summary:InAs/InAsSb superlattices were grown on (001) GaSb substrates by metal organic chemical vapor deposition for potential applications as mid-infrared optoelectronic devices. Atomic force microscopy, X-ray diffraction, transmission electron microscopy and photoluminescence emission were used to characterize the grown structures. The photoluminescence emissions from InAs/InAsSb superlattices were performed over the temperature range from 11K to 300K. The Varshni and Bose-Einstein parameters determined for energy gap were extracted from the photoluminescence spectra by the fitting procedures. The mid-infrared InAs/InAsSb superlattices showed a temperature change of 0.32meV/K. The value is smaller than that of HgCdTe and InSb, making them more desirable for high operating temperature infrared devices. •High quality mid-infrared InAs/InAsSb superlattices were grown on GaSb by MOCVD.•Temperature-dependent Raman scattering was investigated for InAs/GaSb.•First-order temperature coefficients of Raman modes of InAs/GaSb were observed.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2015.10.140