p-Type MoS2 and n-Type ZnO Diode and Its Performance Enhancement by the Piezophototronic Effect

A plasma‐induced p‐type MoS2 flake and n‐type ZnO film diode, which exhibits an excellent rectification ratio, is demonstrated. Under 365 nm optical irradiation, this p–n diode shows a strong photoresponse with an external quantum efficiency of 52.7% and a response time of 66 ms. By increasing the p...

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Published in:Advanced materials (Weinheim) 2016-05, Vol.28 (17), p.3391-3398
Main Authors: Xue, Fei, Chen, Libo, Chen, Jian, Liu, Jingbin, Wang, Longfei, Chen, Mengxiao, Pang, Yaokun, Yang, Xiaonian, Gao, Guoyun, Zhai, Junyi, Wang, Zhong Lin
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Language:English
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diodes
n-type ZnO
p-type MoS2
photoresponse
piezophototronic effect
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container_issue 17
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container_title Advanced materials (Weinheim)
container_volume 28
creator Xue, Fei
Chen, Libo
Chen, Jian
Liu, Jingbin
Wang, Longfei
Chen, Mengxiao
Pang, Yaokun
Yang, Xiaonian
Gao, Guoyun
Zhai, Junyi
Wang, Zhong Lin
description A plasma‐induced p‐type MoS2 flake and n‐type ZnO film diode, which exhibits an excellent rectification ratio, is demonstrated. Under 365 nm optical irradiation, this p–n diode shows a strong photoresponse with an external quantum efficiency of 52.7% and a response time of 66 ms. By increasing the pressure on the junction to 23 MPa, the photocurrent can be enhanced by a factor of four through the piezophototronic effect.
doi_str_mv 10.1002/adma.201506472
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subjects diodes
n-type ZnO
p-type MoS2
photoresponse
piezophototronic effect
title p-Type MoS2 and n-Type ZnO Diode and Its Performance Enhancement by the Piezophototronic Effect
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