Synthesis and characterization of PbTe thin films by atomic layer deposition

PbTe thin films on silicon substrates were prepared by an atomic layer deposition (ALD) for the first time, using lead (II) bis (2,2,6,6‐tetramethyl‐3,5‐heptanedionato) and (trimethylsilyl) tellurid as ALD precursors, at deposition temperature as low as 170 °C. The formation of a PbTe thin film on t...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2014-06, Vol.211 (6), p.1329-1333
Main Authors: Zhang, K., Pillai, A. D. Ramalingom, Tangirala, M., Nminibapiel, D., Bollenbach, K., Cao, W., Baumgart, H., Chakravadhanula, V. S. K., Kübel, C., Kochergin, V.
Format: Article
Language:English
Subjects:
atomic layer deposition
Deposition
Diffraction
Intermetallics
Islands
Lead base alloys
lead chalcogenides
Lead tellurides
Silicon substrates
thermoelectric materials
Thin films
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Summary:PbTe thin films on silicon substrates were prepared by an atomic layer deposition (ALD) for the first time, using lead (II) bis (2,2,6,6‐tetramethyl‐3,5‐heptanedionato) and (trimethylsilyl) tellurid as ALD precursors, at deposition temperature as low as 170 °C. The formation of a PbTe thin film on the Si substrates was strongly dependent on the growth temperature. X‐ray diffraction measurement indicated that thin films were polycrystalline and have characteristic face‐centered cubic rock salt structure with a preferential (200) orientation. Scanning electron microscopy showed PbTe thin films were grown in the Volmer–Weber island mode.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201300307