Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes

In this paper, AlGaN/GaN‐ and GaN/AlGaN/GaN‐based Schottky barrier diodes (SBDs) were fabricated and studied for comparison. The recorded electrical characteristics of the devices show that the introduction of a GaN cap layer can evidently reduce the reverse leakage current and suppress the forward...

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Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2015-05, Vol.212 (5), p.1158-1161
Main Authors: Kang, He, Wang, Quan, Xiao, Hongling, Wang, Cuimei, Jiang, Lijuan, Feng, Chun, Chen, Hong, Yin, Haibo, Qu, Shenqi, Peng, Enchao, Gong, Jiamin, Wang, Xiaoliang, Li, Baiquan, Wang, Zhanguo, Hou, Xun
Format: Article
Language:English
Subjects:
AlGaN
Aluminum gallium nitrides
Barriers
Decomposition
Devices
Diodes
Gallium nitrides
GaN
Leakage current
nitride semiconductors
Schottky barriers
Schottky diodes
thin films
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Summary:In this paper, AlGaN/GaN‐ and GaN/AlGaN/GaN‐based Schottky barrier diodes (SBDs) were fabricated and studied for comparison. The recorded electrical characteristics of the devices show that the introduction of a GaN cap layer can evidently reduce the reverse leakage current and suppress the forward current decay of the devices. What is more important, the GaN/AlGaN/GaN‐based SBDs are capable of greatly alleviating the unrecoverable degradation of the reverse characteristics, which was observed in the device without a GaN cap layer when the device was under long time reverse dc stress. Detailed analyses were discussed.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201431719