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Towards solar cell emitters based on colloidal Si nanocrystals

The application of layers of doped colloidal silicon nanocrystals sandwiched between hydrogenated amorphous silicon layers as emitters in silicon heterojunction solar cells is explored. It is shown that such emitters provide excellent interface passivation and reasonable conductivity. Final solar ce...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2015-01, Vol.212 (1), p.156-161
Main Authors: Leendertz, Caspar, Chirvony, Vladimir S., García-Calzada, Raúl, Görög, Lukáš, Töfflinger, Jan Amaru, Korte, Lars, Agouram, Saïd, Martínez-Pastor, Juan, Petermann, Nils, Wiggers, Hartmut, Ulyashin, Alexander G.
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Language:English
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Summary:The application of layers of doped colloidal silicon nanocrystals sandwiched between hydrogenated amorphous silicon layers as emitters in silicon heterojunction solar cells is explored. It is shown that such emitters provide excellent interface passivation and reasonable conductivity. Final solar cells with such nanoparticle emitters reach conversion efficiencies on the same level as solar cells with conventional hetero emitters. Quantum efficiency measurements indicate that the light absorbed in the nanocrystals contributes to the current extracted from the solar cell. The remaining challenges that need to be addressed before the application of such colloidal silicon nanocrystals for the processing of low‐cost and potentially printable emitter layers becomes feasible are discussed. The application of doped colloidal silicon nanocrystals sandwiched between hydrogenated amorphous silicon layers as emitters in silicon heterojunction solar cells may turn out to be an interesting system to exploit quantum confinement effects in solar cells or for the processing of low‐cost and potentially printable emitter layers. Here we discuss the technological challenges of such an approach and present first solar cells that reach conversion efficiencies of 13.7%.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201431264