Polarization doping for III-nitride optoelectronics

The paper considers new opportunities for design of various optoelectronic devices opened by the use of polarization doping in III‐nitride heterostructures, including distributed polarization doping (DPD) in graded‐composition alloys. The polarization doping is routinely exploiting in high‐electron...

Full description

Saved in:
Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2013-07, Vol.210 (7), p.1369-1376
Main Authors: Khokhlev, Oleg V., Bulashevich, Kirill A., Karpov, Sergey Yu
Format: Article
Language:English
Subjects:
Alloys
Carrier density
Contact resistance
Doping
III-nitride semiconductors
Light-emitting diodes
Ohmic contacts
Optoelectronic devices
Polarization
polarization doping
tunnel junctions
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The paper considers new opportunities for design of various optoelectronic devices opened by the use of polarization doping in III‐nitride heterostructures, including distributed polarization doping (DPD) in graded‐composition alloys. The polarization doping is routinely exploiting in high‐electron mobility transistors for a long time. In contrast, this concept has not yet been applied to light‐emitting diodes (LEDs), laser diodes (LDs), and solar cells (SCs) until recently, in spite of its great potential advantage – capability of producing holes with high concentrations that can never be achieved by conventional impurity doping. Using simulations, we apply the concept of polarization doping to find efficient ways for solution of practically important problems: (i) improvement of p‐doping in deep‐UV LED structures, (ii) development of p‐type Ohmic contact to AlGaN alloys with high aluminum content, and (iii) development of III‐nitride tunnel junctions (TJs) capable of forward bias operation. Band diagram and distribution of carrier concentrations in the prototype of acceptor‐free deep‐UV LED structure considered in the paper.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201228614