Technology for III-N heterogeneous mixed-signal electronics

III‐N devices are suitable for high power RF/microwave amplifier, high temperature electronics, and power switches applications, and the peripheral mixed‐signal electronics with sensing, protection, and control functions could provide optimized performance, increased functionality, and enhanced reli...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2014-04, Vol.211 (4), p.769-774
Main Authors: Chen, Kevin J., Kwan, Alex Man Ho, Jiang, Qimeng
Format: Article
Language:English
Subjects:
Circuits
Detection
Devices
Electric potential
Electronics
enhancement/depletion-mode AlGaN/GaN HEMT
Gallium nitrides
heterogeneous integration
Integrated circuits
mixed-signal electronics
Voltage
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Summary:III‐N devices are suitable for high power RF/microwave amplifier, high temperature electronics, and power switches applications, and the peripheral mixed‐signal electronics with sensing, protection, and control functions could provide optimized performance, increased functionality, and enhanced reliability. This paper addresses the technology to discuss the technology options of implementing III‐N mixed‐signal circuits, and then reviews the recent progress in the expansion of design library, based on monolithically integrated enhancement/depletion (E/D)‐mode AlGaN/GaN HEMTs on GaN‐on‐silicon substrates. An integrated GaN proportional‐to‐absolute‐temperature (PTAT) voltage source. Peripheral mixed‐signal circuits with sensing, protection and control functions could provide optimized performance, increased functionality and enhanced reliability to III‐N electronic applications such as high‐frequency power amplifiers, power converters and high‐temperature electronics. In this paper, the device technologies for implementing III‐N mixed‐signal integrated circuits (IC) are discussed, and the latest III‐N mixed‐signal IC prototypes are presented. The figure shows a GaN proportional‐to‐absolute‐temperature (PTAT) voltage source.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201300543