Migration characterization of Ga and In adatoms on dielectric surface in selective MOVPE

Migration characterizations of Ga and In adatoms on the dielectric surface in selective metal organic vapor phase epitaxy （MOVPE） were investigated. In the typical MOVPE environment, the selectivity of growth is preserved for GaN, and the growth rate of GaN micro-pyramids is sensitive to the period...

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Bibliographic Details
Published in:Chinese physics B 2015-11, Vol.24 (11), p.525-529
Main Author: 陈伟杰 韩小标 林佳利 胡国亨 泖铭岗 杨亿斌 陈杰 吴志盛 刘扬 张佰君
Format: Article
Language:English
Subjects:
Dielectrics
Gallium
Gallium nitrides
Indium gallium nitrides
InGaN
Masks
Migration
Scanning electron microscopy
Silicon dioxide
SiO2
介质表面
原子
扫描电子显微镜
迁移特性
选择区域生长
选择性生长
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Summary:Migration characterizations of Ga and In adatoms on the dielectric surface in selective metal organic vapor phase epitaxy （MOVPE） were investigated. In the typical MOVPE environment, the selectivity of growth is preserved for GaN, and the growth rate of GaN micro-pyramids is sensitive to the period of the patterned SiO2 mask. A surface migration induced model was adopted to figure out the effective migration length of Ga adatoms on the dielectric surface. Different from the growth of GaN, the selective area growth of InGaN on the patterned template would induce the deposition of InGaN polycrystalline particles on the patterned Si02 mask with a long period. It was demonstrated with a scanning electron microscope and energy dispersive spectroscopy that the In adatoms exhibit a shorter migration length on the dielectric surface.
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/24/11/118101