Vertically oriented few-layer graphene as an electron field-emitter

Field emission from flat graphene sheets is a challenge due to fewer emission sites. Here, we have synthesized free‐standing vertically oriented few‐layer graphene (FLG) films directly on dielectric substrates by hot‐filament chemical vapor deposition (HFCVD) without any catalyst or special substrat...

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Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2013-09, Vol.210 (9), p.1817-1821
Main Authors: Behura, Sanjay K., Mukhopadhyay, Indrajit, Hirose, Akira, Yang, Qiaoqin, Jani, Omkar
Format: Article
Language:English
Subjects:
chemical vapor deposition
Dielectrics
Emission
Emitters (electron)
few-layer graphene
Field emission
Flats
Graphene
Silicon substrates
Topography
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cited_by cdi_FETCH-LOGICAL-c3882-7cc9d60d9332baed4d693d193964e93fe7e775dcb765572a65bfc45131985fe43
cites cdi_FETCH-LOGICAL-c3882-7cc9d60d9332baed4d693d193964e93fe7e775dcb765572a65bfc45131985fe43
container_end_page 1821
container_issue 9
container_start_page 1817
container_title Physica status solidi. A, Applications and materials science
container_volume 210
creator Behura, Sanjay K.
Mukhopadhyay, Indrajit
Hirose, Akira
Yang, Qiaoqin
Jani, Omkar
description Field emission from flat graphene sheets is a challenge due to fewer emission sites. Here, we have synthesized free‐standing vertically oriented few‐layer graphene (FLG) films directly on dielectric substrates by hot‐filament chemical vapor deposition (HFCVD) without any catalyst or special substrate treatment. The fabricated FLGs with a large smooth surface topography, standing roughly vertical to the substrate are found to grow according to the Stranski–Krastanov growth mechanism. The ease of large‐area preparation and the low turn‐on field of 22 V µm−1 in addition to the large field enhancement factor of ≈6520 for electron field emission suggest that the vertically oriented FLGs could be used as a potential edge emitter. Scanning electron microscopy image of vertically oriented few‐layer graphene on a SiO2/Si substrate with the schematic of field electron emission.
doi_str_mv 10.1002/pssa.201329172
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1786167143</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1786167143</sourcerecordid><originalsourceid>FETCH-LOGICAL-c3882-7cc9d60d9332baed4d693d193964e93fe7e775dcb765572a65bfc45131985fe43</originalsourceid><addsrcrecordid>eNqFkE1Lw0AQhoMoWKtXzwEvXlL3I7ubPZaqrVBUaLXHZbuZ6NZtEndTav69KZUiXjzNwDzPMPNG0SVGA4wQualD0AOCMCUSC3IU9XDGScIplseHHqHT6CyEFUIpSwXuRaNX8I012rk2rryFsoE8LmCbON2Cj9-8rt-hhFiHWJcxODCNr8q4sODyBNa2acCfRyeFdgEufmo_erm_m48myfRp_DAaThNDs4wkwhiZc5RLSslSQ57mXNIcSyp5CpIWIEAIlpul4IwJojlbFiZluHsgYwWktB9d7_fWvvrcQGjU2gYDzukSqk1QWGQcc4FT2qFXf9BVtfFld53qxoJkXGSiowZ7yvgqBA-Fqr1da98qjNQuU7XLVB0y7QS5F7bWQfsPrZ5ns-FvN9m7NjTwdXC1_1BcUMHU4nGsxHgyXyzmUt3Sb3_0iZQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1437286787</pqid></control><display><type>article</type><title>Vertically oriented few-layer graphene as an electron field-emitter</title><source>Wiley-Blackwell Read &amp; Publish Collection</source><creator>Behura, Sanjay K. ; Mukhopadhyay, Indrajit ; Hirose, Akira ; Yang, Qiaoqin ; Jani, Omkar</creator><creatorcontrib>Behura, Sanjay K. ; Mukhopadhyay, Indrajit ; Hirose, Akira ; Yang, Qiaoqin ; Jani, Omkar</creatorcontrib><description>Field emission from flat graphene sheets is a challenge due to fewer emission sites. Here, we have synthesized free‐standing vertically oriented few‐layer graphene (FLG) films directly on dielectric substrates by hot‐filament chemical vapor deposition (HFCVD) without any catalyst or special substrate treatment. The fabricated FLGs with a large smooth surface topography, standing roughly vertical to the substrate are found to grow according to the Stranski–Krastanov growth mechanism. The ease of large‐area preparation and the low turn‐on field of 22 V µm−1 in addition to the large field enhancement factor of ≈6520 for electron field emission suggest that the vertically oriented FLGs could be used as a potential edge emitter. Scanning electron microscopy image of vertically oriented few‐layer graphene on a SiO2/Si substrate with the schematic of field electron emission.</description><identifier>ISSN: 1862-6300</identifier><identifier>EISSN: 1862-6319</identifier><identifier>DOI: 10.1002/pssa.201329172</identifier><language>eng</language><publisher>Weinheim: Blackwell Publishing Ltd</publisher><subject>chemical vapor deposition ; Dielectrics ; Emission ; Emitters (electron) ; few-layer graphene ; Field emission ; Flats ; Graphene ; Silicon substrates ; Topography</subject><ispartof>Physica status solidi. A, Applications and materials science, 2013-09, Vol.210 (9), p.1817-1821</ispartof><rights>2013 WILEY-VCH Verlag GmbH &amp; Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3882-7cc9d60d9332baed4d693d193964e93fe7e775dcb765572a65bfc45131985fe43</citedby><cites>FETCH-LOGICAL-c3882-7cc9d60d9332baed4d693d193964e93fe7e775dcb765572a65bfc45131985fe43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Behura, Sanjay K.</creatorcontrib><creatorcontrib>Mukhopadhyay, Indrajit</creatorcontrib><creatorcontrib>Hirose, Akira</creatorcontrib><creatorcontrib>Yang, Qiaoqin</creatorcontrib><creatorcontrib>Jani, Omkar</creatorcontrib><title>Vertically oriented few-layer graphene as an electron field-emitter</title><title>Physica status solidi. A, Applications and materials science</title><addtitle>Phys. Status Solidi A</addtitle><description>Field emission from flat graphene sheets is a challenge due to fewer emission sites. Here, we have synthesized free‐standing vertically oriented few‐layer graphene (FLG) films directly on dielectric substrates by hot‐filament chemical vapor deposition (HFCVD) without any catalyst or special substrate treatment. The fabricated FLGs with a large smooth surface topography, standing roughly vertical to the substrate are found to grow according to the Stranski–Krastanov growth mechanism. The ease of large‐area preparation and the low turn‐on field of 22 V µm−1 in addition to the large field enhancement factor of ≈6520 for electron field emission suggest that the vertically oriented FLGs could be used as a potential edge emitter. Scanning electron microscopy image of vertically oriented few‐layer graphene on a SiO2/Si substrate with the schematic of field electron emission.</description><subject>chemical vapor deposition</subject><subject>Dielectrics</subject><subject>Emission</subject><subject>Emitters (electron)</subject><subject>few-layer graphene</subject><subject>Field emission</subject><subject>Flats</subject><subject>Graphene</subject><subject>Silicon substrates</subject><subject>Topography</subject><issn>1862-6300</issn><issn>1862-6319</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqFkE1Lw0AQhoMoWKtXzwEvXlL3I7ubPZaqrVBUaLXHZbuZ6NZtEndTav69KZUiXjzNwDzPMPNG0SVGA4wQualD0AOCMCUSC3IU9XDGScIplseHHqHT6CyEFUIpSwXuRaNX8I012rk2rryFsoE8LmCbON2Cj9-8rt-hhFiHWJcxODCNr8q4sODyBNa2acCfRyeFdgEufmo_erm_m48myfRp_DAaThNDs4wkwhiZc5RLSslSQ57mXNIcSyp5CpIWIEAIlpul4IwJojlbFiZluHsgYwWktB9d7_fWvvrcQGjU2gYDzukSqk1QWGQcc4FT2qFXf9BVtfFld53qxoJkXGSiowZ7yvgqBA-Fqr1da98qjNQuU7XLVB0y7QS5F7bWQfsPrZ5ns-FvN9m7NjTwdXC1_1BcUMHU4nGsxHgyXyzmUt3Sb3_0iZQ</recordid><startdate>201309</startdate><enddate>201309</enddate><creator>Behura, Sanjay K.</creator><creator>Mukhopadhyay, Indrajit</creator><creator>Hirose, Akira</creator><creator>Yang, Qiaoqin</creator><creator>Jani, Omkar</creator><general>Blackwell Publishing Ltd</general><general>Wiley Subscription Services, Inc</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>201309</creationdate><title>Vertically oriented few-layer graphene as an electron field-emitter</title><author>Behura, Sanjay K. ; Mukhopadhyay, Indrajit ; Hirose, Akira ; Yang, Qiaoqin ; Jani, Omkar</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3882-7cc9d60d9332baed4d693d193964e93fe7e775dcb765572a65bfc45131985fe43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>chemical vapor deposition</topic><topic>Dielectrics</topic><topic>Emission</topic><topic>Emitters (electron)</topic><topic>few-layer graphene</topic><topic>Field emission</topic><topic>Flats</topic><topic>Graphene</topic><topic>Silicon substrates</topic><topic>Topography</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Behura, Sanjay K.</creatorcontrib><creatorcontrib>Mukhopadhyay, Indrajit</creatorcontrib><creatorcontrib>Hirose, Akira</creatorcontrib><creatorcontrib>Yang, Qiaoqin</creatorcontrib><creatorcontrib>Jani, Omkar</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica status solidi. A, Applications and materials science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Behura, Sanjay K.</au><au>Mukhopadhyay, Indrajit</au><au>Hirose, Akira</au><au>Yang, Qiaoqin</au><au>Jani, Omkar</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Vertically oriented few-layer graphene as an electron field-emitter</atitle><jtitle>Physica status solidi. A, Applications and materials science</jtitle><addtitle>Phys. Status Solidi A</addtitle><date>2013-09</date><risdate>2013</risdate><volume>210</volume><issue>9</issue><spage>1817</spage><epage>1821</epage><pages>1817-1821</pages><issn>1862-6300</issn><eissn>1862-6319</eissn><abstract>Field emission from flat graphene sheets is a challenge due to fewer emission sites. Here, we have synthesized free‐standing vertically oriented few‐layer graphene (FLG) films directly on dielectric substrates by hot‐filament chemical vapor deposition (HFCVD) without any catalyst or special substrate treatment. The fabricated FLGs with a large smooth surface topography, standing roughly vertical to the substrate are found to grow according to the Stranski–Krastanov growth mechanism. The ease of large‐area preparation and the low turn‐on field of 22 V µm−1 in addition to the large field enhancement factor of ≈6520 for electron field emission suggest that the vertically oriented FLGs could be used as a potential edge emitter. Scanning electron microscopy image of vertically oriented few‐layer graphene on a SiO2/Si substrate with the schematic of field electron emission.</abstract><cop>Weinheim</cop><pub>Blackwell Publishing Ltd</pub><doi>10.1002/pssa.201329172</doi><tpages>5</tpages></addata></record>
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subjects chemical vapor deposition
Dielectrics
Emission
Emitters (electron)
few-layer graphene
Field emission
Flats
Graphene
Silicon substrates
Topography
title Vertically oriented few-layer graphene as an electron field-emitter
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-24T09%3A31%3A46IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Vertically%20oriented%20few-layer%20graphene%20as%20an%20electron%20field-emitter&rft.jtitle=Physica%20status%20solidi.%20A,%20Applications%20and%20materials%20science&rft.au=Behura,%20Sanjay%20K.&rft.date=2013-09&rft.volume=210&rft.issue=9&rft.spage=1817&rft.epage=1821&rft.pages=1817-1821&rft.issn=1862-6300&rft.eissn=1862-6319&rft_id=info:doi/10.1002/pssa.201329172&rft_dat=%3Cproquest_cross%3E1786167143%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c3882-7cc9d60d9332baed4d693d193964e93fe7e775dcb765572a65bfc45131985fe43%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1437286787&rft_id=info:pmid/&rfr_iscdi=true