Investigation of carrier spill‐over in In G a N ‐based light‐emitting diodes by temperature dependences of resonant photoluminescence and open‐circuit voltage

In InGaN-based light-emitting diodes (LEDs), carrier leakage to the outside of the active quantum wells (QWs) has been considered as one of the dominant carrier loss mechanisms at high current densities. In order to verify the carrier spill-over phenomenon, we compared the electroluminescence (EL) e...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2013-10, Vol.210 (10), p.2204-2208
Main Authors: Han, Dong‐Pyo, Kang, Min‐Goo, Oh, Chan‐Hyoung, Kim, Hyunsung, Kim, Kyu‐Sang, Shin, Dong‐Soo, Shim, Jong‐In
Format: Article
Language:English
Subjects:
Carrier density
Carriers
Current carriers
Density
Electric potential
Light-emitting diodes
Photoluminescence
Voltage
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Summary:In InGaN-based light-emitting diodes (LEDs), carrier leakage to the outside of the active quantum wells (QWs) has been considered as one of the dominant carrier loss mechanisms at high current densities. In order to verify the carrier spill-over phenomenon, we compared the electroluminescence (EL) efficiency, the resonant photoluminescence (PL) efficiency, and the open-circuit voltage as functions of current, temperature, and excitation laser power. Very similar tendencies were experimentally observed among the three physical quantities, which implied that carriers were spilt over out of the QWs even in the resonant PL experiment.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201329187