Neutron-irradiation effect on the electrical characteristics of amorphous silicon carbide and nitrogen-doped silicon carbide films prepared by PECVD technology

Silicon carbide (SiC) and nitrogen‐doped silicon carbide (SiC(N)) films were deposited on p‐type Si(100) substrates at various deposition conditions by means of plasma‐enhanced chemical vapor deposition (PECVD) technology using silane (SiH4), methane (CH4), and ammonia (NH3) gas as precursors. The c...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2013-12, Vol.210 (12), p.2756-2761
Main Authors: Huran, Jozef, Boháček, Pavol, Shvetsov, Valery N., Kobzev, Alexander P., Kleinová, Angela, Borzakov, Sergey B., Hrubčín, Ladislav, Sekáčová, Mária, Balalykin, Nikolay I.
Format: Article
Language:English
Subjects:
Amorphous materials
Chemical vapor deposition
Concentration (composition)
Deposition
Fourier transforms
Infrared spectroscopy
neutron irradiation
plasma-enhanced chemical vapor deposition
SiC
SiC, thin films
Silicon carbide
thin films
Volt-ampere characteristics
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Summary:Silicon carbide (SiC) and nitrogen‐doped silicon carbide (SiC(N)) films were deposited on p‐type Si(100) substrates at various deposition conditions by means of plasma‐enhanced chemical vapor deposition (PECVD) technology using silane (SiH4), methane (CH4), and ammonia (NH3) gas as precursors. The concentration of elements in the films was determined by Rutherford backscattering spectrometry (RBS) and elastic recoil detection (ERD) analytical method simultaneously. Chemical composition was analyzed by Fourier transform infrared spectroscopy (FT‐IR). The films contain a small amount of oxygen. IR results showed the presence of SiC, SiN, SiH, CH, CN, NH, and SiO bonds. The current–voltage (I–V) characteristics of samples before and after neutron irradiation were measured. The measured current increases after irradiation with neutrons.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201330248