Formation of mesostructured thin films at the air-liquid interface

The growth of free-standing surfactant-templated films of inorganic oxides at the air-solution interface is an attractive route to manufacture unsupported mesostructured membranes for a range of potential applications. So far this synthesis method has been relatively neglected due to the fragility o...

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Bibliographic Details
Published in:Chemical Society reviews 2013-01, Vol.42 (9), p.3765-3776
Main Authors: Edler, Karen J, Yang, Bin
Format: Article
Language:English
Subjects:
Air
Formations
Fragility
Information dissemination
Oxide coatings
Oxides
Oxides - chemistry
Particle Size
Porosity
Silicon Dioxide - chemistry
Solutions
Surface Properties
Surface-Active Agents - chemistry
Surfactants
Synthesis
Thin films
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Summary:The growth of free-standing surfactant-templated films of inorganic oxides at the air-solution interface is an attractive route to manufacture unsupported mesostructured membranes for a range of potential applications. So far this synthesis method has been relatively neglected due to the fragility of the initial films. More recent work to understand the mechanism of formation has led to development of thicker, more robust films, as well as providing new information on the general formation mechanisms of mesoporous materials whether in film or particulate form. This review describes the properties of silica and other inorganic oxide films templated by surfactants and grown at the air-solution interface, their formation mechanisms and implications for further development of these materials.
ISSN:0306-0012
1460-4744
DOI:10.1039/c2cs35300h