Elaboration and characterisation of CuInS2/β-In2-xAlxS3/ZnO sprayed solar cell

Nanostructured CuInS 2 /β-In 2-x Al x S 3 /ZnO (C1) solar cell with all component layers deposited by a low cost chemical spray pyrolysis method is characterised. CuInS 2 , β-In 2-x Al x S 3 and ZnO are used as an absorber material, a buffer layer and an optical window respectively. The influence of...

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Bibliographic Details
Published in:Materials technology (New York, N.Y.) N.Y.), 2015-09, Vol.30 (5), p.282-287
Main Authors: Ajili, M., Kamoun, N. T.
Format: Article
Language:English
Subjects:
1-x
2-x
Aluminium
Chemical spray pyrolysis
CuIn
Deposition
Nanostructure
Photovoltaic cells
Solar cell
Solar cells
Thin films
Transmittance
Zinc oxide
ZnO:Al
ZnO:Sn
β-In
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Summary:Nanostructured CuInS 2 /β-In 2-x Al x S 3 /ZnO (C1) solar cell with all component layers deposited by a low cost chemical spray pyrolysis method is characterised. CuInS 2 , β-In 2-x Al x S 3 and ZnO are used as an absorber material, a buffer layer and an optical window respectively. The influence of gallium incorporation into the absorbent material on the photovoltaic parameters of this solar cell was studied. The solar cell based on the CuIn 1-x Ga x S 2 absorber thin layer showed good rectification, with significant improvements in all photovoltaic parameters compared to those of the solar cell based on CuInS 2 absorber thin layer. On the other hand, the influence of aluminium and tin doping of ZnO thin film on the performance of CuIn 1-x Ga x S 2 /β-In 2-x Al x S 3 /ZnO (C2) solar cell is also studied. The nanostructure based on ZnO:Al (C4) performs better than the other based on ZnO:Sn (C3). This result is related to the lower resistivity and high transmittance of ZnO:Al than those of ZnO:Sn.
ISSN:1066-7857
1753-5557
DOI:10.1179/1753555714Y.0000000260