A non-contact graphene surface scattering rate characterization method at microwave frequency by combining Raman spectroscopy and coaxial connectors measurement

A non-contact method is proposed to characterize graphene at microwave frequency by combining Raman spectroscopy and Amphenol Precision Connector (APC-7). The CVD-grown graphene is transferred to the ring-shape Teflon substrate and characterized by Raman spectroscopy to estimate its doping density a...

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Bibliographic Details
Published in:Carbon (New York) 2014-10, Vol.77, p.53-58
Main Authors: Wei, Xing-Chang, Xu, Yi-Li, Meng, Nan, Xu, Yang, Hakro, Ayaz, Dai, Gao-Le, Hao, Ran, Li, Er-Ping
Format: Article
Language:English
Subjects:
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Connectors
Cross-disciplinary physics: materials science
rheology
Density
Exact sciences and technology
Fermi surfaces
Graphene
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Microwave frequencies
Physics
Polytetrafluoroethylenes
Raman spectroscopy
Scattering
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Summary:A non-contact method is proposed to characterize graphene at microwave frequency by combining Raman spectroscopy and Amphenol Precision Connector (APC-7). The CVD-grown graphene is transferred to the ring-shape Teflon substrate and characterized by Raman spectroscopy to estimate its doping density and the related Fermi energy. The graphene is then sandwiched between two APC-7 coaxial connectors and S parameters under transverse electromagnetic (TEM) mode normal incident waves are measured to extract the surface conductivity through transmission matrix, in which the de-embedding process can be avoided. By combing the Kubo formula with our proposed circuit model, the scattering rate of graphene on Teflon substrate is obtained and analyzed.
ISSN:0008-6223
1873-3891
DOI:10.1016/j.carbon.2014.04.095