Effect of swift heavy ion irradiation on structural and opto-electrical properties of bi-layer CdS-Bi sub(2)S sub(3) thin films prepared by solution growth technique at room temperature

CdS-Bi sub(2)S sub(3) bi-layer thin films have been deposited by chemical bath deposition method on Indium Tin Oxide glass substrate at room temperature. The as-deposited thin films were annealed at 250 [degrees]C in an air atmosphere for 1 h. An air annealed thin film was irradiated using Au super(...

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Bibliographic Details
Published in:Radiation physics and chemistry (Oxford, England : 1993) England : 1993), 2015-01, Vol.106, p.193-198
Main Authors: Shaikh, Shaheed U, Siddiqui, Farha Y, Desale, Deepali J, Ghule, Anil V, Singh, Fouran, Kulriya, Pawan K, Sharma, Ramphal
Format: Article
Language:English
Subjects:
Annealing
Atomic force microscopy
Deposition
Electronics
Indium tin oxide
Irradiation
Thin films
X-ray diffraction
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Summary:CdS-Bi sub(2)S sub(3) bi-layer thin films have been deposited by chemical bath deposition method on Indium Tin Oxide glass substrate at room temperature. The as-deposited thin films were annealed at 250 [degrees]C in an air atmosphere for 1 h. An air annealed thin film was irradiated using Au super(9+) ions with the energy of 120 MeV at fluence 5 x 10 super(12) ions/cm super(2) using tandem pelletron accelerator. The irradiation induced modifications were studied using X-ray diffraction (XRD), Atomic Force Microscopy (AFM), Raman spectroscopy, UV spectroscopy and l-V characteristics. XRD study reveals that the as-deposited thin films were nanocrystalline in nature. The decrease in crystallite size, increase in energy band gap and resistivity were observed after irradiation. Results are explained on the basis of energy deposited by the electronic loss after irradiation. The comparative results of as-deposited, air annealed and irradiated CdS-Bi sub(2)S sub(3) bi-layer thin films are presented.
ISSN:0969-806X
DOI:10.1016/j.radphyschem.2014.07.017