Development of a Simple Analytical PSpice Model for SiC-Based BJT Power Modules

A simple analytical Spice-type model has been developed and verified for the first time for 4H-SiC-based bipolar junction transistor (BJT) power module with voltage and current rating of 1200 V and 800 A. The simulation model is based on a temperature-dependent silicon carbide (SiC) Gummel-Poon mode...

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Bibliographic Details
Published in:IEEE transactions on power electronics 2016-06, Vol.31 (6), p.4517-4525
Main Authors: Johannesson, Daniel, Nawaz, Muhammad
Format: Article
Language:English
Subjects:
4H-SiC
4H-SiC BJT
Computer simulation
Device Modeling
Device simulation
Devices
Dynamic characteristics
Electric currents
Electric potential
Electric power
Mathematical analysis
Mathematical model
Mathematical models
Modules
Multichip modules
PSpice
Resistance
Silicon carbide
Simulation
SPICE
Temperature
Temperature dependence
Temperature measurement
Transistors
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Summary:A simple analytical Spice-type model has been developed and verified for the first time for 4H-SiC-based bipolar junction transistor (BJT) power module with voltage and current rating of 1200 V and 800 A. The simulation model is based on a temperature-dependent silicon carbide (SiC) Gummel-Poon model for high-power applications. PSpice simulations are performed to extract technology-dependent modeling parameters coupled with static and dynamic characteristics of BJTs at different temperatures and validated against the measured data. Influence of various circuit elements, for instance, stray inductance and base resistance and internal device modeling parameters, carrier life time, and emitter doping, on switching losses has been studied. The performance of the SiC BJT model is fairly accurate and correlates well with the measured results over a wide temperature range.
ISSN:0885-8993
1941-0107
1941-0107
DOI:10.1109/TPEL.2015.2477477