High temperature characteristics of monolithically integrated LED and MOS-channel HEMT in GaN using selective epi removal

In this paper, we have investigated the high temperature characteristics of monolithically integrated LED and MOS‐channel HEMT in GaN. The monolithically integrated LED/MOSC‐HEMT was implemented by using a selective epi removal approach. The temperature dependence of optical and electrical character...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2015-05, Vol.212 (5), p.1110-1115
Main Authors: Li, Z., Waldron, J., Chowdhury, S., Zhao, L., Detchprohm, T., Wetzel, C., Karlicek Jr, R. F., Chow, T. P.
Format: Article
Language:English
Subjects:
Bias
Gallium nitrides
GaN
Gates
High electron mobility transistors
Light-emitting diodes
Materials science
metal-oxide-semiconductor structures
monolithic integration
Semiconductor devices
Temperature dependence
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Summary:In this paper, we have investigated the high temperature characteristics of monolithically integrated LED and MOS‐channel HEMT in GaN. The monolithically integrated LED/MOSC‐HEMT was implemented by using a selective epi removal approach. The temperature dependence of optical and electrical characteristics of the integrated LED is found to be comparable to that of discrete GaN based LEDs. On‐resistance of the MOSC‐HEMT shows gradual increase with temperature (~1.6× increase from 25 °C to 225 °C) whereas LED LOP shows rapid decrease with temperature (~6× decrease from 25 °C to 225 °C). Light output of the integrated LED is modulated by the MOSC‐HEMT gate bias up to 225 °C.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201431660