Interface-assisted magnetoresistance behavior for ultrathin NiFe films

Interface-assisted magnetoresistance (MR) behavior has been studied in Ta/MgO/NiFe/MgO/Ta multilayers by inserting a Mg metal layer between the NiFe layer and the top MgO layer. It is shown that MR ratio is about 31% larger than that in the films without Mg insertion. X-ray photoelectron spectroscop...

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Bibliographic Details
Published in:Journal of magnetism and magnetic materials 2015-11, Vol.393, p.419-422
Main Authors: Jiang, Shao-Long, Chen, Xi, Yang, Kang, Han, Gang, Teng, Jiao, Li, Xu-Jing, Yang, Guang, Liu, Qian-Qian, Liu, Yi-Wei, Ding, Lei, Yu, Guang-Hua
Format: Article
Language:English
Subjects:
Crystallization
Interface chemical states
Intermetallics
Iron compounds
Magnesium oxide
Magnetoresistance
Magnetoresistance behavior
Magnetoresistivity
Nickel base alloys
Nickel compounds
NiFe film
Tantalum
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Summary:Interface-assisted magnetoresistance (MR) behavior has been studied in Ta/MgO/NiFe/MgO/Ta multilayers by inserting a Mg metal layer between the NiFe layer and the top MgO layer. It is shown that MR ratio is about 31% larger than that in the films without Mg insertion. X-ray photoelectron spectroscopy and high resolution transmission electron microscope analyses show that the enhanced MR is primarily ascribed to effective control of chemical states at the NiFe/MgO interface and crystallization of the top MgO layer. •We studied magnetic and electric transport properties of ultrathin NiFe films.•Interface chemical states have strong influence on MR in NiFe films.•Crystallization of the top MgO layer has influence on MR in NiFe films.
ISSN:0304-8853
DOI:10.1016/j.jmmm.2015.05.050