Complementary and bipolar regimes of resistive switching in TiN/HfO sub(2)/TiN stacks grown by atomic-layer deposition

Atomic-layer deposition (ALD) technique in combination with in vacuo X-ray photoelectron spectroscopy (XPS) analysis has been successfully employed to obtain fully ALD-grown planar TiN/HfO sub(2)/TiN metal-insulator-metal structures for resistive random access memory (ReRAM) memory elements. In vacu...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2015-04, Vol.212 (4), p.809-816
Main Authors: Egorov, K V, Kirtaev, R V, Lebedinskii, YuYu, Markeev, A M, Matveyev, YuA, Orlov, OM, Zablotskiy, A V, Zenkevich, A V
Format: Article
Language:English
Subjects:
Deposition
Electronics
Hafnium oxide
Stacks
Switching
Tin
Titanium dioxide
X-ray photoelectron spectroscopy
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Summary:Atomic-layer deposition (ALD) technique in combination with in vacuo X-ray photoelectron spectroscopy (XPS) analysis has been successfully employed to obtain fully ALD-grown planar TiN/HfO sub(2)/TiN metal-insulator-metal structures for resistive random access memory (ReRAM) memory elements. In vacuo XPS analysis of ALD-grown TiN/HfO sub(2)/TiN stacks reveals the presence of the ultrathin oxidized layers consisting of TiON (0.5nm) and TiO sub(2) (0.6nm) at the bottom TiN/HfO sub(2) interface (i); the nonoxidized TiN at the top HfO sub(2)/TiN interface (ii); the oxygen deficiency in the HfO sub(2) layer does not exceed the XPS detection limit (iii). Electroformed ALD TiN/HfO sub(2)/TiN stacks reveal both conventional bipolar and complementary types of resistive switching. In the complementary resistive switching regime, each programming sequence is terminated by a reset operation, leaving the TiN/HfO sub(2)/TiN stack in a high-resistance state. The observed feature can avoid detrimental leaky paths during successive reading operation, which is useful in the passive ReRAM arrays without a selector element. The bipolar regime of resistive switching is found to reveal the gradual character of the SET and RESET switching processes. Long-term potentiation and depression tests performed on ALD-grown TiN/HfO sub(2)/TiN stacks indicate that they can be used as electronic synapse devices for the implementation of emerging neuromorphic computation systems.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201431674