Graded doping low internal loss 1060-nm InGaAs/AlGaAs quantum well semiconductor lasers

Internal loss is a key internal parameter for high power 1060-nm InGaAs/AlGaAs semiconductor laser. In this paper, we discuss the origin of internal loss of 1060-nm InGaAs/GaAs quantum well (QW) AlGaAs separate confinement het-erostructure semiconductor laser, and the method to reduce internal loss....

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Bibliographic Details
Published in:Chinese physics B 2015-06, Vol.24 (6), p.64211-1-064211-4, Article 064211
Main Authors: Tan, Shao-Yang, Zhai, Teng, Zhang, Rui-Kang, Lu, Dan, Wang, Wei, Ji, Chen
Format: Article
Language:English
Subjects:
Aluminum gallium arsenides
Doping
Lasers
Quantum wells
Ridges
Semiconductor lasers
Slopes
Threshold currents
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Summary:Internal loss is a key internal parameter for high power 1060-nm InGaAs/AlGaAs semiconductor laser. In this paper, we discuss the origin of internal loss of 1060-nm InGaAs/GaAs quantum well (QW) AlGaAs separate confinement het-erostructure semiconductor laser, and the method to reduce internal loss. By light doping the n-cladding layer, and stepwise doping the p-cladding layer combined with the expanded waveguide layer, a broad area laser with internal loss of 1/cm is designed and fabricated. Ridge waveguide laser with an output power of 350 mW is obtained. The threshold current and slope efficiency near the threshold current are 20 mA and 0.8 W/A, respectively.
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/24/6/064211