Electron distribution in polar heterojunctions within a realistic model

We present a theoretical study of the electron distribution, i.e., two-dimensional electron gas (2DEG) in polar heterojunctions (HJs) within a realistic model. The 2DEG is confined along the growth direction by a triangular quantum well with a finite potential barrier and a bent band figured by all...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2015-12, Vol.479, p.62-66
Main Authors: Tien, Nguyen Thanh, Thao, Dinh Nhu, Thao, Pham Thi Bich, Quang, Doan Nhat
Format: Article
Language:English
Subjects:
Condensed matter
Confinement
Confining
Density
Electron distribution
Electron gas
Finite potential barrier
Hetero-junction
Heterojunctions
Interface polarization charge
Modulation doping
Polar semiconductor
Polarization
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Summary:We present a theoretical study of the electron distribution, i.e., two-dimensional electron gas (2DEG) in polar heterojunctions (HJs) within a realistic model. The 2DEG is confined along the growth direction by a triangular quantum well with a finite potential barrier and a bent band figured by all confinement sources. Therein, interface polarization charges take a double role: they induce a confining potential and, furthermore, they can make some change in other confinements, e.g., in the Hartree potential from ionized impurities and 2DEG. Confinement by positive interface polarization charges is necessary for the ground state of 2DEG existing at a high sheet density. The 2DEG bulk density is found to be increased in the barrier, so that the scattering occurring in this layer (from interface polarization charges and alloy disorder) becomes paramount in a polar modulation-doped HJ.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2015.09.042