Loading…

Electron distribution in polar heterojunctions within a realistic model

We present a theoretical study of the electron distribution, i.e., two-dimensional electron gas (2DEG) in polar heterojunctions (HJs) within a realistic model. The 2DEG is confined along the growth direction by a triangular quantum well with a finite potential barrier and a bent band figured by all...

Full description

Saved in:
Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2015-12, Vol.479, p.62-66
Main Authors: Tien, Nguyen Thanh, Thao, Dinh Nhu, Thao, Pham Thi Bich, Quang, Doan Nhat
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c336t-e9b01b649c645ab34886ae6cbbd6b6320ded3c24a3dd1fc34b556d5d838f22333
cites cdi_FETCH-LOGICAL-c336t-e9b01b649c645ab34886ae6cbbd6b6320ded3c24a3dd1fc34b556d5d838f22333
container_end_page 66
container_issue
container_start_page 62
container_title Physica. B, Condensed matter
container_volume 479
creator Tien, Nguyen Thanh
Thao, Dinh Nhu
Thao, Pham Thi Bich
Quang, Doan Nhat
description We present a theoretical study of the electron distribution, i.e., two-dimensional electron gas (2DEG) in polar heterojunctions (HJs) within a realistic model. The 2DEG is confined along the growth direction by a triangular quantum well with a finite potential barrier and a bent band figured by all confinement sources. Therein, interface polarization charges take a double role: they induce a confining potential and, furthermore, they can make some change in other confinements, e.g., in the Hartree potential from ionized impurities and 2DEG. Confinement by positive interface polarization charges is necessary for the ground state of 2DEG existing at a high sheet density. The 2DEG bulk density is found to be increased in the barrier, so that the scattering occurring in this layer (from interface polarization charges and alloy disorder) becomes paramount in a polar modulation-doped HJ.
doi_str_mv 10.1016/j.physb.2015.09.042
format article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1786208382</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0921452615302532</els_id><sourcerecordid>1786208382</sourcerecordid><originalsourceid>FETCH-LOGICAL-c336t-e9b01b649c645ab34886ae6cbbd6b6320ded3c24a3dd1fc34b556d5d838f22333</originalsourceid><addsrcrecordid>eNp9kD1PwzAQhi0EEqXwC1gysiT4u8nAgKpSkCqxwGz546I6SuNgJyD-PS5l5pbT2e9z0j0I3RJcEUzkfVeN--9kKoqJqHBTYU7P0ILUK1ZSwsQ5WuCGkpILKi_RVUodzkVWZIG2mx7sFMNQOJ-m6M08-Tz4oRhDr2Oxhwli6ObBHt9T8eWnff7URQTdZ8Lb4hAc9NfootV9gpu_vkTvT5u39XO5e92-rB93pWVMTiU0BhMjeWMlF9owXtdSg7TGOGkko9iBY5ZyzZwjrWXcCCGdcDWrW0oZY0t0d9o7xvAxQ5rUwScLfa8HCHNSZFVLinOc5ig7RW0MKUVo1Rj9QcdvRbA6alOd-tWmjtoUblTWlqmHEwX5ik8PUSXrYbDgfMymlAv-X_4HdZV4aw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1786208382</pqid></control><display><type>article</type><title>Electron distribution in polar heterojunctions within a realistic model</title><source>ScienceDirect Journals</source><creator>Tien, Nguyen Thanh ; Thao, Dinh Nhu ; Thao, Pham Thi Bich ; Quang, Doan Nhat</creator><creatorcontrib>Tien, Nguyen Thanh ; Thao, Dinh Nhu ; Thao, Pham Thi Bich ; Quang, Doan Nhat</creatorcontrib><description>We present a theoretical study of the electron distribution, i.e., two-dimensional electron gas (2DEG) in polar heterojunctions (HJs) within a realistic model. The 2DEG is confined along the growth direction by a triangular quantum well with a finite potential barrier and a bent band figured by all confinement sources. Therein, interface polarization charges take a double role: they induce a confining potential and, furthermore, they can make some change in other confinements, e.g., in the Hartree potential from ionized impurities and 2DEG. Confinement by positive interface polarization charges is necessary for the ground state of 2DEG existing at a high sheet density. The 2DEG bulk density is found to be increased in the barrier, so that the scattering occurring in this layer (from interface polarization charges and alloy disorder) becomes paramount in a polar modulation-doped HJ.</description><identifier>ISSN: 0921-4526</identifier><identifier>EISSN: 1873-2135</identifier><identifier>DOI: 10.1016/j.physb.2015.09.042</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Condensed matter ; Confinement ; Confining ; Density ; Electron distribution ; Electron gas ; Finite potential barrier ; Hetero-junction ; Heterojunctions ; Interface polarization charge ; Modulation doping ; Polar semiconductor ; Polarization</subject><ispartof>Physica. B, Condensed matter, 2015-12, Vol.479, p.62-66</ispartof><rights>2015 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c336t-e9b01b649c645ab34886ae6cbbd6b6320ded3c24a3dd1fc34b556d5d838f22333</citedby><cites>FETCH-LOGICAL-c336t-e9b01b649c645ab34886ae6cbbd6b6320ded3c24a3dd1fc34b556d5d838f22333</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Tien, Nguyen Thanh</creatorcontrib><creatorcontrib>Thao, Dinh Nhu</creatorcontrib><creatorcontrib>Thao, Pham Thi Bich</creatorcontrib><creatorcontrib>Quang, Doan Nhat</creatorcontrib><title>Electron distribution in polar heterojunctions within a realistic model</title><title>Physica. B, Condensed matter</title><description>We present a theoretical study of the electron distribution, i.e., two-dimensional electron gas (2DEG) in polar heterojunctions (HJs) within a realistic model. The 2DEG is confined along the growth direction by a triangular quantum well with a finite potential barrier and a bent band figured by all confinement sources. Therein, interface polarization charges take a double role: they induce a confining potential and, furthermore, they can make some change in other confinements, e.g., in the Hartree potential from ionized impurities and 2DEG. Confinement by positive interface polarization charges is necessary for the ground state of 2DEG existing at a high sheet density. The 2DEG bulk density is found to be increased in the barrier, so that the scattering occurring in this layer (from interface polarization charges and alloy disorder) becomes paramount in a polar modulation-doped HJ.</description><subject>Condensed matter</subject><subject>Confinement</subject><subject>Confining</subject><subject>Density</subject><subject>Electron distribution</subject><subject>Electron gas</subject><subject>Finite potential barrier</subject><subject>Hetero-junction</subject><subject>Heterojunctions</subject><subject>Interface polarization charge</subject><subject>Modulation doping</subject><subject>Polar semiconductor</subject><subject>Polarization</subject><issn>0921-4526</issn><issn>1873-2135</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNp9kD1PwzAQhi0EEqXwC1gysiT4u8nAgKpSkCqxwGz546I6SuNgJyD-PS5l5pbT2e9z0j0I3RJcEUzkfVeN--9kKoqJqHBTYU7P0ILUK1ZSwsQ5WuCGkpILKi_RVUodzkVWZIG2mx7sFMNQOJ-m6M08-Tz4oRhDr2Oxhwli6ObBHt9T8eWnff7URQTdZ8Lb4hAc9NfootV9gpu_vkTvT5u39XO5e92-rB93pWVMTiU0BhMjeWMlF9owXtdSg7TGOGkko9iBY5ZyzZwjrWXcCCGdcDWrW0oZY0t0d9o7xvAxQ5rUwScLfa8HCHNSZFVLinOc5ig7RW0MKUVo1Rj9QcdvRbA6alOd-tWmjtoUblTWlqmHEwX5ik8PUSXrYbDgfMymlAv-X_4HdZV4aw</recordid><startdate>20151215</startdate><enddate>20151215</enddate><creator>Tien, Nguyen Thanh</creator><creator>Thao, Dinh Nhu</creator><creator>Thao, Pham Thi Bich</creator><creator>Quang, Doan Nhat</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20151215</creationdate><title>Electron distribution in polar heterojunctions within a realistic model</title><author>Tien, Nguyen Thanh ; Thao, Dinh Nhu ; Thao, Pham Thi Bich ; Quang, Doan Nhat</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c336t-e9b01b649c645ab34886ae6cbbd6b6320ded3c24a3dd1fc34b556d5d838f22333</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Condensed matter</topic><topic>Confinement</topic><topic>Confining</topic><topic>Density</topic><topic>Electron distribution</topic><topic>Electron gas</topic><topic>Finite potential barrier</topic><topic>Hetero-junction</topic><topic>Heterojunctions</topic><topic>Interface polarization charge</topic><topic>Modulation doping</topic><topic>Polar semiconductor</topic><topic>Polarization</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tien, Nguyen Thanh</creatorcontrib><creatorcontrib>Thao, Dinh Nhu</creatorcontrib><creatorcontrib>Thao, Pham Thi Bich</creatorcontrib><creatorcontrib>Quang, Doan Nhat</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica. B, Condensed matter</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tien, Nguyen Thanh</au><au>Thao, Dinh Nhu</au><au>Thao, Pham Thi Bich</au><au>Quang, Doan Nhat</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electron distribution in polar heterojunctions within a realistic model</atitle><jtitle>Physica. B, Condensed matter</jtitle><date>2015-12-15</date><risdate>2015</risdate><volume>479</volume><spage>62</spage><epage>66</epage><pages>62-66</pages><issn>0921-4526</issn><eissn>1873-2135</eissn><abstract>We present a theoretical study of the electron distribution, i.e., two-dimensional electron gas (2DEG) in polar heterojunctions (HJs) within a realistic model. The 2DEG is confined along the growth direction by a triangular quantum well with a finite potential barrier and a bent band figured by all confinement sources. Therein, interface polarization charges take a double role: they induce a confining potential and, furthermore, they can make some change in other confinements, e.g., in the Hartree potential from ionized impurities and 2DEG. Confinement by positive interface polarization charges is necessary for the ground state of 2DEG existing at a high sheet density. The 2DEG bulk density is found to be increased in the barrier, so that the scattering occurring in this layer (from interface polarization charges and alloy disorder) becomes paramount in a polar modulation-doped HJ.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.physb.2015.09.042</doi><tpages>5</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0921-4526
ispartof Physica. B, Condensed matter, 2015-12, Vol.479, p.62-66
issn 0921-4526
1873-2135
language eng
recordid cdi_proquest_miscellaneous_1786208382
source ScienceDirect Journals
subjects Condensed matter
Confinement
Confining
Density
Electron distribution
Electron gas
Finite potential barrier
Hetero-junction
Heterojunctions
Interface polarization charge
Modulation doping
Polar semiconductor
Polarization
title Electron distribution in polar heterojunctions within a realistic model
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-06T15%3A45%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Electron%20distribution%20in%20polar%20heterojunctions%20within%20a%20realistic%20model&rft.jtitle=Physica.%20B,%20Condensed%20matter&rft.au=Tien,%20Nguyen%20Thanh&rft.date=2015-12-15&rft.volume=479&rft.spage=62&rft.epage=66&rft.pages=62-66&rft.issn=0921-4526&rft.eissn=1873-2135&rft_id=info:doi/10.1016/j.physb.2015.09.042&rft_dat=%3Cproquest_cross%3E1786208382%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c336t-e9b01b649c645ab34886ae6cbbd6b6320ded3c24a3dd1fc34b556d5d838f22333%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1786208382&rft_id=info:pmid/&rfr_iscdi=true