Illumination impact on the electrical characterizations of an Al Azure A p-Si heterojunction

In this study, we fabricated an Al Azure A p-Si heterojunction. The electrical characterization and photovoltaic properties of the Al Azure A p-Si heterojunction were investigated by current-voltage (I-V) under dark and illuminated conditions at room temperature. The photovoltaic device gives Voc =...

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Bibliographic Details
Published in:Physica scripta 2014-11, Vol.89 (11), p.115810-5
Main Authors: Orak, Toprak, M, Turut, A
Format: Article
Language:English
Subjects:
Aluminum
Azure A
Devices
Diodes
fill factor
Heterojunctions
illumination impact
Mathematical models
Photovoltaic cells
Solar cells
Volt-ampere characteristics
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Summary:In this study, we fabricated an Al Azure A p-Si heterojunction. The electrical characterization and photovoltaic properties of the Al Azure A p-Si heterojunction were investigated by current-voltage (I-V) under dark and illuminated conditions at room temperature. The photovoltaic device gives Voc = 340 mV and Isc = 807 A under 30 mW cm−2. The device was found to have a fill factor (FF) and power conversion efficiency ( P) 36% and 4.07%, respectively. The values of some diode parameters were determined using thermionic emission theory. Some diode parameters, such as the ideality factor (n) and barrier height (φb) values, were found to be 1.26 and 0.78 eV, respectively. An ideality factor higher than 1 can be explained on the basis of the inhomogeneity barrier-height model or as a result of natural oxide layers. The results obtained from electrical and photovoltaic properties show that the device can be used as photodiode and in opto-electronic circuit applications.
ISSN:0031-8949
1402-4896
DOI:10.1088/0031-8949/89/11/115810