Energy distribution extraction of negative charges responsible for positive bias temperature instability

A new method is proposed to extract the energy distribution of negative charges, which results from electron trapping by traps in the gate stack of nMOSFET during positive bias temperature instability (PBTI) stress based on the recovery measurement. In our case, the extracted energy distribution of...

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Bibliographic Details
Published in:Chinese physics B 2015-07, Vol.24 (7), p.77304-1-077304-5
Main Authors: Ren, Shang-Qing, Yang, Hong, Wang, Wen-Wu, Tang, Bo, Tang, Zhao-Yun, Wang, Xiao-Lei, Xu, Hao, Luo, Wei-Chun, Zhao, Chao, Yan, Jiang, Chen, Da-Peng, Ye, Tian-Chun
Format: Article
Language:English
Subjects:
Bias
Electric potential
Energy distribution
Energy levels
Instability
Stability
Stresses
Voltage
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Summary:A new method is proposed to extract the energy distribution of negative charges, which results from electron trapping by traps in the gate stack of nMOSFET during positive bias temperature instability (PBTI) stress based on the recovery measurement. In our case, the extracted energy distribution of negative charges shows an obvious dependence on energy, and the energy level of the largest energy density of negative charges is 0.01 eV above the conduction band of silicon. The charge energy distribution below that energy level shows strong dependence on the stress voltage.
ISSN:1674-1056
1741-4199
DOI:10.1088/1674-1056/24/7/077304