Stabilization and manipulation of electronically phase-separated ground states in defective indium atom wires on silicon

Exploration and manipulation of electronic states in low-dimensional systems are of great importance in the fundamental and practical aspects of nanomaterial and nanotechnology. Here, we demonstrate that the incorporation of vacancy defects into monatomic indium wires on n-type Si(111) can stabilize...

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Bibliographic Details
Published in:Physical review letters 2014-11, Vol.113 (19), p.196802-196802, Article 196802
Main Authors: Zhang, Hui, Ming, Fangfei, Kim, Hyun-Jung, Zhu, Hongbin, Zhang, Qiang, Weitering, Hanno H, Xiao, Xudong, Zeng, Changgan, Cho, Jun-Hyung, Zhang, Zhenyu
Format: Article
Language:English
Subjects:
Charge
Electric fields
Electric wire
Electronics
Ground state
Indium
Nanostructure
Phase separation
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Summary:Exploration and manipulation of electronic states in low-dimensional systems are of great importance in the fundamental and practical aspects of nanomaterial and nanotechnology. Here, we demonstrate that the incorporation of vacancy defects into monatomic indium wires on n-type Si(111) can stabilize electronically phase-separated ground states where the insulating 8×2 and metallic 4×1 phases coexist. Furthermore, the areal ratio of the two phases in the phase-separated states can be tuned reversibly by electric field or charge doping, and such tunabilities can be quantitatively captured by first principles-based modeling and simulations. The present results extend the realm of electronic phase separation from strongly correlated d-electron materials typically in bulk form to weakly interacting sp-electron systems in reduced dimensionality.
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.113.196802