Optical and dielectric properties of PbZrO3 thin films prepared by a sol–gel process for energy-storage application

• Published in: Materials & design 2016-01, Vol.90, p.410-415
• Main Authors: Zhang, T.F., Tang, X.G., Liu, Q.X., Jiang, Y.P., Jiang, L.L., Luo, L.
• Format: Article
• Language: English
• Subjects: Density; Devices; Dielectric properties; Energy storage; Optical properties; Optical property; Orientation; PbZrO3; Sol gel process; Sol–gel; Thin films
• ISSN: 0264-1275; 1873-4197
• DOI: 10.1016/j.matdes.2015.11.012

PbZrO3 thin films with (100) and (111) orientation were prepared by a simple sol–gel method. X-ray diffraction results revealed that post-annealing temperatures played an important role on the orientation of PbZrO3 films. The frequency dependence of dielectric properties and the ferroelectric characteristics were measured. Giant energy-storage density and energy-storage efficiency calculated from hysteresis loops achieved about 25.25J/cm3 and 62% for PbZrO3 film with thickness of 292nm, respectively, results indicated that PbZrO3 thin films had a potential application in energy-storage device. Optical properties of PbZrO3 thin films were analyzed by a spectroscopic ellipsometer, results revealed that (111)-orientated PbZrO3 thin films exhibited higher refractive index than that of the (100)-orientated PbZrO3 thin films. [Display omitted] •PbZrO3 thin films were prepared by a simple sol–gel method.•Post-annealing temperature played an impact on the orientation of PbZrO3 films.•Energy-storage density achieved from hysteresis loops achieved about 25.25J/cm3.•(111)-orientated PbZrO3 films exhibited higher refractive index.