Characterization of a-Se p-i-n junction fabricated using bidirectional electrolysis in NaCl(aq)

In this article, we introduce an electrochemical doping method of amorphous selenium (a‐Se) using NaCl(aq). Recently, an a‐Se photovoltaic device fabricated using this method [I. Saito, W. Miyazaki, M. Onishi, Y. Kudo, T. Masuzawa, T. Yamada, A. Koh, D. Chua, K. Soga, M. Overend, M. Aono, G. A. J. A...

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Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2015-10, Vol.212 (10), p.2322-2325
Main Authors: Onishi, Masanori, Saito, Ichitaro, Komiyama, Kaoru, Takeno, Kentaro, Miyazaki, Wataru, Masuzawa, Tomoaki, Koh, Angel T. T., Chua, Daniel H. C., Yamada, Takatoshi, Mori, Yusuke, Okano, Ken
Format: Article
Language:English
Subjects:
amorphous materials
Devices
Doping
Electric potential
electrochemical doping
Electrolysis
Illumination
Materials science
optical properties
P-i-n junctions
photoconductors
photovoltaics
selenium
Sodium
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Summary:In this article, we introduce an electrochemical doping method of amorphous selenium (a‐Se) using NaCl(aq). Recently, an a‐Se photovoltaic device fabricated using this method [I. Saito, W. Miyazaki, M. Onishi, Y. Kudo, T. Masuzawa, T. Yamada, A. Koh, D. Chua, K. Soga, M. Overend, M. Aono, G. A. J. Amaratunga, and K. Okano, Appl. Phys. Lett. 98, 152102 (2011)] has been announced and opened up the potential of a new impurity doping method. This study will further explore its possibilities by doping chlorine (Cl) and sodium (Na) and aim to fabricate a p–n junction by reversing the applied voltage during the electrolysis. The device is characterized through photoelectric measurements. The I–V characteristics show rectification under light illumination.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201532372