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Versatile p-Type Chemical Doping to Achieve Ideal Flexible Graphene Electrodes
We report effective solution‐processed chemical p‐type doping of graphene using trifluoromethanesulfonic acid (CF3SO3H, TFMS), that can provide essential requirements to approach an ideal flexible graphene anode for practical applications: i) high optical transmittance, ii) low sheet resistance (70 ...
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Published in: | Angewandte Chemie International Edition 2016-05, Vol.55 (21), p.6197-6201 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | We report effective solution‐processed chemical p‐type doping of graphene using trifluoromethanesulfonic acid (CF3SO3H, TFMS), that can provide essential requirements to approach an ideal flexible graphene anode for practical applications: i) high optical transmittance, ii) low sheet resistance (70 % decrease), iii) high work function (0.83 eV increase), iv) smooth surface, and iv) air‐stability at the same time. The TFMS‐doped graphene formed nearly ohmic contact with a conventional organic hole transporting layer, and a green phosphorescent organic light‐emitting diode with the TFMS‐doped graphene anode showed lower operating voltage, and higher device efficiencies (104.1 cd A−1, 80.7 lm W−1) than those with conventional ITO (84.8 cd A−1, 73.8 lm W−1).
Anodic optimization: p‐Type chemical doping of graphene with trifluoromethanesulfonic acid (TFMS) leads to a flexible graphene anode with 70 % reduced sheet resistance and 0.83 eV increased surface work function with excellent air‐stability. An OLED with TFMS‐doped graphene anode exhibited lower operating voltage and higher efficiency than those with conventional ITO anode. |
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ISSN: | 1433-7851 1521-3773 |
DOI: | 10.1002/anie.201600414 |