Growth condition optimization and mobility enhancement through prolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure

AlGaN/AlN/GaN structures are grown by metalorganic vapor phase epitaxy on sapphire substrates. Influences of AlN interlayer thickness, AlGaN barrier thickness, and Al composition on the two-dimensional electron gas（2DEG） performance are investigated. Lowering the V/III ratio and enhancing the reacto...

Full description

Saved in:
Bibliographic Details
Published in:Chinese physics B 2015-09, Vol.24 (9), p.399-402
Main Author: 何晓光 赵德刚 江德生 朱建军 陈平 刘宗顺 乐伶聪 杨静 李晓静 张书明 杨辉
Format: Article
Language:English
Subjects:
AlGaN
Aluminum gallium nitrides
Aluminum nitride
Coalescence
Coalescing
Density
Electron gas
Gallium nitrides
Nuclei
优化
流动
生长条件
电子迁移率
粗糙界面散射
结构
聚结
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:AlGaN/AlN/GaN structures are grown by metalorganic vapor phase epitaxy on sapphire substrates. Influences of AlN interlayer thickness, AlGaN barrier thickness, and Al composition on the two-dimensional electron gas（2DEG） performance are investigated. Lowering the V/III ratio and enhancing the reactor pressure at the initial stage of the hightemperature GaN layer growth will prolong the GaN nuclei coalescence process and effectively improve the crystalline quality and the interface morphology, diminishing the interface roughness scattering and improving 2DEG mobility. AlGaN/AlN/GaN structure with 2DEG sheet density of 1.19 × 10^13cm^-2, electron mobility of 2101 cm^2·V^-1·s^-1, and square resistance of 249 Ω is obtained.
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/24/9/096802