Electronic mobility in the high-carrier-density limit of ion gel gated IDTBT thin film transistors

• Published in: Chinese physics B 2015-09, Vol.24 (9), p.20-24
• Main Author: 包蓓 邵宪一 谭璐 王文河 吴越珅 文理斌 赵家庆 唐伟 张为民 郭小军 王顺 刘荧
• Format: Article
• Language: English
• Subjects: Charge transport; Disorders; Electronics; Gating and risering; Polymers; Semiconductor devices; Thin film transistors; Three dimensional; 凝胶; 半导体聚合物; 电荷传输; 离子; 薄膜电晶体; 载流子密度; 门控; 高电子迁移率
• ISSN: 1674-1056; 2058-3834; 1741-4199
• DOI: 10.1088/1674-1056/24/9/098103

Indacenodithiophene-co-benzothiadiazole（IDTBT） has emerged as one of the most exciting semiconducting polymers in recent years because of its high electronic mobility and charge transport along the polymer backbone. By using the recently developed ion gel gating technique we studied the charge transport of IDTBT at carrier densities up to 10^21cm^-3.While the conductivity in IDTBT was found to be enhanced by nearly six orders of magnitude by ionic gating, the charge transport in IDTBT was found to remain 3D Mott variable range hopping even down to the lowest temperature of our measurements, 12 K. The maximum mobility was found to be around 0.2 cm^2·V^-1·s^-1, lower than that of Cytop gated field effect transistors reported previously. We attribute the lower mobility to the additional disorder induced by the ionic gating.