Electronic mobility in the high-carrier-density limit of ion gel gated IDTBT thin film transistors

Indacenodithiophene-co-benzothiadiazole（IDTBT） has emerged as one of the most exciting semiconducting polymers in recent years because of its high electronic mobility and charge transport along the polymer backbone. By using the recently developed ion gel gating technique we studied the charge trans...

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Published in:Chinese physics B 2015-09, Vol.24 (9), p.20-24
Main Author: 包蓓 邵宪一 谭璐 王文河 吴越珅 文理斌 赵家庆 唐伟 张为民 郭小军 王顺 刘荧
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Language:English
Subjects:
Charge transport
Disorders
Electronics
Gating and risering
Polymers
Semiconductor devices
Thin film transistors
Three dimensional
凝胶
半导体聚合物
电荷传输
离子
薄膜电晶体
载流子密度
门控
高电子迁移率
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creator 包蓓 邵宪一 谭璐 王文河 吴越珅 文理斌 赵家庆 唐伟 张为民 郭小军 王顺 刘荧
description Indacenodithiophene-co-benzothiadiazole（IDTBT） has emerged as one of the most exciting semiconducting polymers in recent years because of its high electronic mobility and charge transport along the polymer backbone. By using the recently developed ion gel gating technique we studied the charge transport of IDTBT at carrier densities up to 10^21cm^-3.While the conductivity in IDTBT was found to be enhanced by nearly six orders of magnitude by ionic gating, the charge transport in IDTBT was found to remain 3D Mott variable range hopping even down to the lowest temperature of our measurements, 12 K. The maximum mobility was found to be around 0.2 cm^2·V^-1·s^-1, lower than that of Cytop gated field effect transistors reported previously. We attribute the lower mobility to the additional disorder induced by the ionic gating.
doi_str_mv 10.1088/1674-1056/24/9/098103
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subjects Charge transport
Disorders
Electronics
Gating and risering
Polymers
Semiconductor devices
Thin film transistors
Three dimensional
凝胶
半导体聚合物
电荷传输
离子
薄膜电晶体
载流子密度
门控
高电子迁移率
title Electronic mobility in the high-carrier-density limit of ion gel gated IDTBT thin film transistors
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