Trap Kinetics in Solution-Processed Organic Thin-Film Transistors

The role of traps in controlling source-drain current in organic thin-film transistors (OTFTs) is not well understood and has so far been studied only in structures with silicon dioxide as the dielectric. We study trap kinetics in solution-processed OTFT with a polymer gate dielectric and 6,13-bis(t...

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Bibliographic Details
Published in:IEEE electron device letters 2016-01, Vol.37 (1), p.35-38
Main Authors: Singh, Subhash, Mohapatra, Y. N.
Format: Article
Language:English
Subjects:
Activation analysis
Channels
Devices
Dielectrics
Electron traps
Gates
Kinetic theory
Line shape
Logic gates
Organic thin film transistors
Semiconductor devices
Thin film transistors
Transient analysis
Trapping
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Summary:The role of traps in controlling source-drain current in organic thin-film transistors (OTFTs) is not well understood and has so far been studied only in structures with silicon dioxide as the dielectric. We study trap kinetics in solution-processed OTFT with a polymer gate dielectric and 6,13-bis(triisopropylsilylethynyl) pentacene as the organic semiconductor. The trapping kinetics has been studied at different temperatures using time analyzed transient spectroscopy, which enables the detailed line shape analysis of electrical transients. We show unambiguously that the non-exponential turn-ON current transients are not due to the capture of majority holes, but rather are due to the emission of electrons modulating the channel carrier concentration through field. Two dominant electron traps with the activation energies of 0.14 and 0.20 eV are identified of which the former is discrete and the latter continuously distributed.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2015.2499383